2
RF Device Data
Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW, 28 Vdc, IDQ
= 300
mA
Case Temperature 80°C, 18 W CW, 28 Vdc, IDQ
= 300
mA
RθJC
1.3
1.8
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 66 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 100
μAdc)
VGS(th)
1
2.2
3
Vdc
Gate Quiescent Voltage
(VDD
= 28 Vdc, I
D
= 300 mAdc, Measured in Functional Test)
VGS(Q)
2
3.1
4
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 1 Adc)
VDS(on)
0.1
0.3
0.4
Vdc
Dynamic Characteristics (3)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
0.6
?
pF
Output Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
318
?
pF
Input Capacitance
(VDS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Ciss
?
120
?
pF
Functional Tests (4)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, P
out
= 35.5 W CW, I
DQ
= 300 mA, f = 960
MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Power Gain
Gps
17.5
19
?
dB
Drain Efficiency
ηD
54
57
?
%
Input Return Loss
IRL
?
-13
-7
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part internally matched both on input and output.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
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